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学者姓名：张万荣
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摘要 ：
Artificial neural network (ANN) model development for microwave components principally includes two parts of work, i.e., data sampling and model structure adaptation. In existing various ANN modeling methods, the model structure adaptation process mainly focuses on adjusting the number of neurons within each hidden layer of ANN while keeping the number of layers unchanged. To make the ANN modeling process more flexible and efficient, an automated multilayer neural network structure adaptation method with l(1) regularization is proposed in this letter. We propose a new ANN model structure combining multilayer perceptron (MLP) and additional connections between the output layer and each hidden layer/input layer. A new training scheme with l(1) regularization is proposed to automatically determine the final model structure with user-desired model accuracy. Using the proposed model structure adaptation method, both the number of layers and the number of neurons within each layer of the final ANN model can be adaptively determined to address different needs for different microwave modeling problems. The proposed method is demonstrated by two microwave filter modeling examples in which the model development process achieves a time saving of at least 40% over existing methods.
关键词 ：
design automation design automation modeling modeling model structure adaptation model structure adaptation Artificial neural network (ANN) Artificial neural network (ANN)
引用：
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| GB/T 7714 | Na, Weicong , Liu, Ke , Zhang, Wanrong et al. Automated Multilayer Neural Network Structure Adaptation Method With l(1) Regularization for Microwave Modeling [J]. | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS , 2022 , 32 (7) : 815-818 . |
| MLA | Na, Weicong et al. "Automated Multilayer Neural Network Structure Adaptation Method With l(1) Regularization for Microwave Modeling" . | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 32 . 7 (2022) : 815-818 . |
| APA | Na, Weicong , Liu, Ke , Zhang, Wanrong , Feng, Feng , Xie, Hongyun , Jin, Dongyue . Automated Multilayer Neural Network Structure Adaptation Method With l(1) Regularization for Microwave Modeling . | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS , 2022 , 32 (7) , 815-818 . |
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摘要 ：
A novel SiGe/Si phototransistor with high figure of merit (FOM) of gain early voltage for optical communication was designed and fabricated in a standard 0.35-mu m BiCMOS process. A compound base consisting of a P-Si layer and a P -SiGe layer was designed to achieve a good optical response through relieving the negative influence induced by doped ion's mutual diffusion in device fabrication. The fabricated surface-illuminated SiGe/Si heterojunction phototransistor (HPT) was measured under 850-nm incident light with a variety of optical powers at 1-V collector bias. When the incident optical power was 2.29 mu W, the collector current reached 4.45 mu A. The maximum gain exceeded 6.925 with the dark current of about 100 pA. The FOM of gain* early voltage of the proposed SiGe/Si HPT can achieve 100.97. Its optical DC and RF responses under high light power were analyzed with a physically based simulation model, which considered the process effects of device fabrication detailed. The optical gain may promote to 13.3 but with the deteriorated output performance and a smaller early voltage. The maximum optical characteristic frequency may reach 17.6 GHz.
关键词 ：
photocurrent gain photocurrent gain 0.35-mu m BiCMOS technology 0.35-mu m BiCMOS technology SiGe/Si heterojunction phototransistor (HPT) SiGe/Si heterojunction phototransistor (HPT) early voltage early voltage
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| GB/T 7714 | Xie, Hongyun , Xiang, Yang , Sha, Yin et al. A SiGe/Si Phototransistor With High FOM of Gain* V-A Using 0.35-mu m BiCMOS Technology [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (10) : 5612-5617 . |
| MLA | Xie, Hongyun et al. "A SiGe/Si Phototransistor With High FOM of Gain* V-A Using 0.35-mu m BiCMOS Technology" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 69 . 10 (2022) : 5612-5617 . |
| APA | Xie, Hongyun , Xiang, Yang , Sha, Yin , Ji, Ruilang , Zhu, Fu , Shen, Xiaoting et al. A SiGe/Si Phototransistor With High FOM of Gain* V-A Using 0.35-mu m BiCMOS Technology . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (10) , 5612-5617 . |
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摘要 ：
In electromagnetic (EM) optimization of microwave design, a computationally bad starting point usually leads the local optimization process to be stuck into local optimum, which does not satisfy the design specifications. In this situation, global optimization methods can be an alternative to achieve the final optimal solution. However, global optimization methods always suffer from a relatively low convergence rate. To address this problem, we propose an efficient EM optimization technique with a novel parallel local sampling strategy and Bayesian optimization (BO) for microwave applications in this article. We develop a new parallel local sampling strategy to increase the exploitation ability near the potential optimal solution in each optimization iteration and improve the convergence of the entire optimization process. The local sampling range in each iteration is determined based on the derivative information of the current potential optimal solution. While conventional BO only uses the information of potential optimal solutions in each iteration during optimization, we propose to exploit both the generated local samples and the potential optimal solutions together to build a surrogate model and guide the optimization. Therefore, the exploration and exploitation during the proposed EM optimization are well balanced, and the entire EM optimization process is effectively accelerated in comparison to other existing global methods. Examples of EM optimizations of microwave components are used to demonstrate the proposed technique.
关键词 ：
Bayes methods Bayes methods Wireless communication Wireless communication Bayesian optimization (BO) Bayesian optimization (BO) Optimization Optimization Data models Data models electromagnetic (EM) optimization electromagnetic (EM) optimization Optimization methods Optimization methods Probabilistic logic Probabilistic logic Microwave theory and techniques Microwave theory and techniques microwave applications microwave applications parallel local sampling parallel local sampling
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| GB/T 7714 | Na, Weicong , Liu, Ke , Cai, Haocheng et al. Efficient EM Optimization Exploiting Parallel Local Sampling Strategy and Bayesian Optimization for Microwave Applications [J]. | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS , 2021 , 31 (10) : 1103-1106 . |
| MLA | Na, Weicong et al. "Efficient EM Optimization Exploiting Parallel Local Sampling Strategy and Bayesian Optimization for Microwave Applications" . | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 31 . 10 (2021) : 1103-1106 . |
| APA | Na, Weicong , Liu, Ke , Cai, Haocheng , Zhang, Wanrong , Xie, Hongyun , Jin, Dongyue . Efficient EM Optimization Exploiting Parallel Local Sampling Strategy and Bayesian Optimization for Microwave Applications . | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS , 2021 , 31 (10) , 1103-1106 . |
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| GB/T 7714 | Dong, Xiaoqiao , Li, Ming , Zhang, Wanrong et al. Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors [J]. | SCIENCE CHINA-INFORMATION SCIENCES , 2020 , 63 (10) . |
| MLA | Dong, Xiaoqiao et al. "Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors" . | SCIENCE CHINA-INFORMATION SCIENCES 63 . 10 (2020) . |
| APA | Dong, Xiaoqiao , Li, Ming , Zhang, Wanrong , Yang, Yuancheng , Chen, Gong , Sun, Shuang et al. Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors . | SCIENCE CHINA-INFORMATION SCIENCES , 2020 , 63 (10) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Deep neural network techniques are recently recognized as powerful tools in solving complex and challenging modeling problems of microwave components. However, direct training of a fully connected deep neural network with sigmoid functions using the backpropagation (BP) algorithm is difficult because of the vanishing gradient problem. In this paper, we propose a novel deep neural network modeling technique with batch normalization (BN) to address the vanishing gradient problem. BN layers are added before every sigmoid hidden layer of the deep neural network to normalize the inputs of each sigmoid hidden layer with additional scaling and shifting, thus overcoming the vanishing gradient problem. Automated model generation (AMG) algorithm is also utilized to automatically determine the suitable number of BN layers and sigmoid hidden layers during deep neural network training process. This proposed technique is illustrated by two microwave examples.
关键词 ：
automated model generation automated model generation batch normalization batch normalization Deep neural networks Deep neural networks microwave modeling microwave modeling
引用：
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| GB/T 7714 | Na, Weicong , Liu, Ke , Zhang, Wanrong et al. Deep Neural Network with Batch Normalization for Automated Modeling of Microwave Components [C] . 2020 . |
| MLA | Na, Weicong et al. "Deep Neural Network with Batch Normalization for Automated Modeling of Microwave Components" . (2020) . |
| APA | Na, Weicong , Liu, Ke , Zhang, Wanrong , Xie, Hongyun , Jin, Dongyue . Deep Neural Network with Batch Normalization for Automated Modeling of Microwave Components . (2020) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Based on gyrator-C principle, a novel active inductor with high self-resonance frequency, high Q factor and independent adjustment of inductance is proposed in this paper. A varactor is added in parallel with the positive transconductor to improve the tunable range of inductance. A tunable resistor between positive transconductor and negative transconductor is used to generate negative resistance, thus enhance the Q factor. Furthermore, a feedback capacitor is also employed not only to generate negative conductance for enhancing the Q factor, but also to provide negative capacitance for achieving high self-resonance frequency. The results show that the self-resonance frequency is up to 12GHz, the peak Q factor is more than 1300. The peak inductance can be adjusted significantly between 25.1nH-84.8nH with the tuning range of 108.6%, whereas the variation of the peak Q factor is only 1.6%.
关键词 ：
active inductor active inductor high-frequency high-frequency independent adjustment independent adjustment
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| GB/T 7714 | Zhang, Zhao , Zhang, Wanrong , Xie, Hongyun et al. A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance [C] . 2019 . |
| MLA | Zhang, Zhao et al. "A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance" . (2019) . |
| APA | Zhang, Zhao , Zhang, Wanrong , Xie, Hongyun , Jin, Dongyue , Na, Weicong , Wan, Hezhan et al. A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance . (2019) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
A variable gain low noise amplifier (VGLNA) with dual regulation schemes of gain was proposed and verified based on the TSMC0.18 mu m CMOS process. The gain stage of the VGLNA is mainly composed of a MOS transistor switch array and a tunable transconductance regulator. The MOS transistor switch array realizes the discrete adjustment of gain by switching on and off of the 8 MOS switches to change the load of the circuit. The tunable transconductance regulator located at the load position completes the continuous regulation of gain by controlling its bias voltage. The results showed that the gain of the VGLNA can be adjusted discretely and the continuously in the range of -7dB similar to 20dB with the minimum noise factor of 3.7dB and the maximum linearity of IIP3 of -2.5dBm under frequency of 5.8 GHz. The VGLNA with dual adjustments of gain by both digital mode and analog mode will have a wider range of applications.
关键词 ：
adjustable transconductance adjustable transconductance low noise amplifier low noise amplifier switch array switch array variable gain variable gain
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| GB/T 7714 | Zhang, Zeng , Liu, Peng , Zhang, Wanrong et al. A Low Noise Amplifier with Gain Regulation by Discrete and Continuous Modes [C] . 2019 . |
| MLA | Zhang, Zeng et al. "A Low Noise Amplifier with Gain Regulation by Discrete and Continuous Modes" . (2019) . |
| APA | Zhang, Zeng , Liu, Peng , Zhang, Wanrong , Tang, Yan , Xie, Hongyun , Jin, Dongyue et al. A Low Noise Amplifier with Gain Regulation by Discrete and Continuous Modes . (2019) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Based on gyrator-C principle, a novel active inductor with high self-resonance frequency, high Q factor and independent adjustment of inductance is proposed in this paper. A varactor is added in parallel with the positive transconductor to improve the tunable range of inductance. A tunable resistor between positive transconductor and negative transconductor is used to generate negative resistance, thus enhance the Q factor. Furthermore, a feedback capacitor is also employed not only to generate negative conductance for enhancing the Q factor, but also to provide negative capacitance for achieving high self-resonance frequency. The results show that the self-resonance frequency is up to 12GHz, the peak Q factor is more than 1300. The peak inductance can be adjusted significantly between 25.1nH-84.8nH with the tuning range of 108.6%, whereas the variation of the peak Q factor is only 1.6%. © 2019 IEEE.
关键词 ：
Optical resonators Optical resonators Q factor measurement Q factor measurement Inductance Inductance Electric inductors Electric inductors Transconductance Transconductance Natural frequencies Natural frequencies
引用：
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| GB/T 7714 | Zhang, Zhao , Zhang, Wanrong , Xie, Hongyun et al. A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance [C] . 2019 . |
| MLA | Zhang, Zhao et al. "A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance" . (2019) . |
| APA | Zhang, Zhao , Zhang, Wanrong , Xie, Hongyun , Jin, Dongyue , Na, Weicong , Wan, Hezhan et al. A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance . (2019) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
In this paper, an analytical model is developed for parasitic gate capacitance of the gate-all-around (GAA) silicon nanowire MOSFETs (SNWT) with asymmetrical top and bottom gates. The modeling results show that the gate-to-source/drain spacer significantly impacts on the parasitic capacitance especially in the case of top-to-bottom gate misalignment. It is found that the optimized top-to-bottom gate misalignment may achieve smaller C-p/C-total so as to improve the AC performance of GAA SNWT. The developed capacitance model is more suitable for the actual process for further device design optimization.
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| GB/T 7714 | Dong, Xiaoqiao , Yang, Yuancheng , Chen, Gong et al. Impact of Gate Asymmetry on Gate-All-Around Silicon Nanovvire Transistor Parasitic Capacitance [C] . 2018 : 296-298 . |
| MLA | Dong, Xiaoqiao et al. "Impact of Gate Asymmetry on Gate-All-Around Silicon Nanovvire Transistor Parasitic Capacitance" . (2018) : 296-298 . |
| APA | Dong, Xiaoqiao , Yang, Yuancheng , Chen, Gong , Sun, Shuang , Cai, Qifeng , Li, Xiaokang et al. Impact of Gate Asymmetry on Gate-All-Around Silicon Nanovvire Transistor Parasitic Capacitance . (2018) : 296-298 . |
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摘要 ：
This paper presents a novel LC voltage-controlled-oscillator (VCO) based on active inductor (AI). Taking advantage of equivalent RLC model of the AI, a novel tunable differential AI (DAI) is designed and used to act as the LC tank of the VCO. First, a tunable DAI with cascode-structure and current-mirror feedback networks is designed to achieve high quality factor (Q) and high equivalent parallel resistance (Rp). Then, the DAI is used to replace LC in VCO to realize good comprehensive performance of VCO such as low phase noise, low power consumption and high output power. Based on TSMC 0.18 mu m RF CMOS process, the novel VCO is verified by Agilent's Advanced Design System (ADS). The results show that under the supply voltage of 1.8V, the output power reaches up to -4.2 dBm, a frequency tuning range is in 1.126-2.713 GHz, and the phase noise at 1-MHz offset is -117.2 dBc/Hz. A power of only 13.6 mW is consumed.
关键词 ：
active inductor active inductor LC voltage-controlled-oscillator LC voltage-controlled-oscillator output power output power phase noise phase noise power consumption power consumption
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| GB/T 7714 | Zhang, Yin , Zhang, Wanrong , Shen, Pei et al. A Novel LC VCO with High Output Power and Low Phase Noise Using Differential Active Inductor [C] . 2018 : 90-93 . |
| MLA | Zhang, Yin et al. "A Novel LC VCO with High Output Power and Low Phase Noise Using Differential Active Inductor" . (2018) : 90-93 . |
| APA | Zhang, Yin , Zhang, Wanrong , Shen, Pei , Xie, Hongyun , Jin, Dongyue , Xu, Shu et al. A Novel LC VCO with High Output Power and Low Phase Noise Using Differential Active Inductor . (2018) : 90-93 . |
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