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学者姓名：张万荣
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摘要 ：
In electromagnetic (EM) optimization of microwave design, a computationally bad starting point usually leads the local optimization process to be stuck into local optimum, which does not satisfy the design specifications. In this situation, global optimization methods can be an alternative to achieve the final optimal solution. However, global optimization methods always suffer from a relatively low convergence rate. To address this problem, we propose an efficient EM optimization technique with a novel parallel local sampling strategy and Bayesian optimization (BO) for microwave applications in this article. We develop a new parallel local sampling strategy to increase the exploitation ability near the potential optimal solution in each optimization iteration and improve the convergence of the entire optimization process. The local sampling range in each iteration is determined based on the derivative information of the current potential optimal solution. While conventional BO only uses the information of potential optimal solutions in each iteration during optimization, we propose to exploit both the generated local samples and the potential optimal solutions together to build a surrogate model and guide the optimization. Therefore, the exploration and exploitation during the proposed EM optimization are well balanced, and the entire EM optimization process is effectively accelerated in comparison to other existing global methods. Examples of EM optimizations of microwave components are used to demonstrate the proposed technique.
关键词 ：
Bayesian optimization (BO) Bayesian optimization (BO) Bayes methods Bayes methods Data models Data models electromagnetic (EM) optimization electromagnetic (EM) optimization microwave applications microwave applications Microwave theory and techniques Microwave theory and techniques Optimization Optimization Optimization methods Optimization methods parallel local sampling parallel local sampling Probabilistic logic Probabilistic logic Wireless communication Wireless communication
引用：
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| GB/T 7714 | Na, Weicong , Liu, Ke , Cai, Haocheng et al. Efficient EM Optimization Exploiting Parallel Local Sampling Strategy and Bayesian Optimization for Microwave Applications [J]. | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS , 2021 , 31 (10) : 1103-1106 . |
| MLA | Na, Weicong et al. "Efficient EM Optimization Exploiting Parallel Local Sampling Strategy and Bayesian Optimization for Microwave Applications" . | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 31 . 10 (2021) : 1103-1106 . |
| APA | Na, Weicong , Liu, Ke , Cai, Haocheng , Zhang, Wanrong , Xie, Hongyun , Jin, Dongyue . Efficient EM Optimization Exploiting Parallel Local Sampling Strategy and Bayesian Optimization for Microwave Applications . | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS , 2021 , 31 (10) , 1103-1106 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Deep neural network techniques are recently recognized as powerful tools in solving complex and challenging modeling problems of microwave components. However, direct training of a fully connected deep neural network with sigmoid functions using the backpropagation (BP) algorithm is difficult because of the vanishing gradient problem. In this paper, we propose a novel deep neural network modeling technique with batch normalization (BN) to address the vanishing gradient problem. BN layers are added before every sigmoid hidden layer of the deep neural network to normalize the inputs of each sigmoid hidden layer with additional scaling and shifting, thus overcoming the vanishing gradient problem. Automated model generation (AMG) algorithm is also utilized to automatically determine the suitable number of BN layers and sigmoid hidden layers during deep neural network training process. This proposed technique is illustrated by two microwave examples.
关键词 ：
automated model generation automated model generation batch normalization batch normalization Deep neural networks Deep neural networks microwave modeling microwave modeling
引用：
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| GB/T 7714 | Na, Weicong , Liu, Ke , Zhang, Wanrong et al. Deep Neural Network with Batch Normalization for Automated Modeling of Microwave Components [C] . 2020 . |
| MLA | Na, Weicong et al. "Deep Neural Network with Batch Normalization for Automated Modeling of Microwave Components" . (2020) . |
| APA | Na, Weicong , Liu, Ke , Zhang, Wanrong , Xie, Hongyun , Jin, Dongyue . Deep Neural Network with Batch Normalization for Automated Modeling of Microwave Components . (2020) . |
| 导入链接 | NoteExpress RIS BibTex |
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| GB/T 7714 | Dong, Xiaoqiao , Li, Ming , Zhang, Wanrong et al. Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors [J]. | SCIENCE CHINA-INFORMATION SCIENCES , 2020 , 63 (10) . |
| MLA | Dong, Xiaoqiao et al. "Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors" . | SCIENCE CHINA-INFORMATION SCIENCES 63 . 10 (2020) . |
| APA | Dong, Xiaoqiao , Li, Ming , Zhang, Wanrong , Yang, Yuancheng , Chen, Gong , Sun, Shuang et al. Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors . | SCIENCE CHINA-INFORMATION SCIENCES , 2020 , 63 (10) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Based on gyrator-C principle, a novel active inductor with high self-resonance frequency, high Q factor and independent adjustment of inductance is proposed in this paper. A varactor is added in parallel with the positive transconductor to improve the tunable range of inductance. A tunable resistor between positive transconductor and negative transconductor is used to generate negative resistance, thus enhance the Q factor. Furthermore, a feedback capacitor is also employed not only to generate negative conductance for enhancing the Q factor, but also to provide negative capacitance for achieving high self-resonance frequency. The results show that the self-resonance frequency is up to 12GHz, the peak Q factor is more than 1300. The peak inductance can be adjusted significantly between 25.1nH-84.8nH with the tuning range of 108.6%, whereas the variation of the peak Q factor is only 1.6%.
关键词 ：
active inductor active inductor high-frequency high-frequency independent adjustment independent adjustment
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| GB/T 7714 | Zhang, Zhao , Zhang, Wanrong , Xie, Hongyun et al. A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance [C] . 2019 . |
| MLA | Zhang, Zhao et al. "A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance" . (2019) . |
| APA | Zhang, Zhao , Zhang, Wanrong , Xie, Hongyun , Jin, Dongyue , Na, Weicong , Wan, Hezhan et al. A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance . (2019) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
A variable gain low noise amplifier (VGLNA) with dual regulation schemes of gain was proposed and verified based on the TSMC0.18 mu m CMOS process. The gain stage of the VGLNA is mainly composed of a MOS transistor switch array and a tunable transconductance regulator. The MOS transistor switch array realizes the discrete adjustment of gain by switching on and off of the 8 MOS switches to change the load of the circuit. The tunable transconductance regulator located at the load position completes the continuous regulation of gain by controlling its bias voltage. The results showed that the gain of the VGLNA can be adjusted discretely and the continuously in the range of -7dB similar to 20dB with the minimum noise factor of 3.7dB and the maximum linearity of IIP3 of -2.5dBm under frequency of 5.8 GHz. The VGLNA with dual adjustments of gain by both digital mode and analog mode will have a wider range of applications.
关键词 ：
adjustable transconductance adjustable transconductance low noise amplifier low noise amplifier switch array switch array variable gain variable gain
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| GB/T 7714 | Zhang, Zeng , Liu, Peng , Zhang, Wanrong et al. A Low Noise Amplifier with Gain Regulation by Discrete and Continuous Modes [C] . 2019 . |
| MLA | Zhang, Zeng et al. "A Low Noise Amplifier with Gain Regulation by Discrete and Continuous Modes" . (2019) . |
| APA | Zhang, Zeng , Liu, Peng , Zhang, Wanrong , Tang, Yan , Xie, Hongyun , Jin, Dongyue et al. A Low Noise Amplifier with Gain Regulation by Discrete and Continuous Modes . (2019) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Based on gyrator-C principle, a novel active inductor with high self-resonance frequency, high Q factor and independent adjustment of inductance is proposed in this paper. A varactor is added in parallel with the positive transconductor to improve the tunable range of inductance. A tunable resistor between positive transconductor and negative transconductor is used to generate negative resistance, thus enhance the Q factor. Furthermore, a feedback capacitor is also employed not only to generate negative conductance for enhancing the Q factor, but also to provide negative capacitance for achieving high self-resonance frequency. The results show that the self-resonance frequency is up to 12GHz, the peak Q factor is more than 1300. The peak inductance can be adjusted significantly between 25.1nH-84.8nH with the tuning range of 108.6%, whereas the variation of the peak Q factor is only 1.6%. © 2019 IEEE.
关键词 ：
Electric inductors Electric inductors Inductance Inductance Natural frequencies Natural frequencies Optical resonators Optical resonators Q factor measurement Q factor measurement Transconductance Transconductance
引用：
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| GB/T 7714 | Zhang, Zhao , Zhang, Wanrong , Xie, Hongyun et al. A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance [C] . 2019 . |
| MLA | Zhang, Zhao et al. "A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance" . (2019) . |
| APA | Zhang, Zhao , Zhang, Wanrong , Xie, Hongyun , Jin, Dongyue , Na, Weicong , Wan, Hezhan et al. A novel active inductor with high self-resonance frequency high Q factor and independent adjustment of inductance . (2019) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
A wide tuning range, low K-VCO and low phase noise VCO is presented in this paper by combining fully differential active inductor (DAI), switched capacitor array and MOS-based variable capacitors. The adoption of the DAI instead of spiral inductor in the LC tank reduces the phase noise of VCO due to high Q value of DAI. The multiple tuning modes by tunable active inductor, switched capacitor array and variable capacitor make VCO have a wide tuning range of oscillation frequency and lower K-VCO. Based on TSMC 0.18 mu m CMOS process, the VCO is verified by Advanced Design System (ADS). The results show that the oscillation frequency can be tuned from 988MHz to 4601MHz with a wide tuning bandwidth of 129.3%, and the lowest phase noise is -116.88dBc/Hz at 1MHz offset, and the K-VCO is as low as 45-550MHz/V.
关键词 ：
differential active inductor differential active inductor low K-vco low K-vco low phase noise low phase noise VCO VCO wide tuning range wide tuning range
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| GB/T 7714 | Xu, Shu , Zhang, Wanrong , Shen, Pei et al. A Wide Tuning Range Low Kvco and Low Phase Noise VCO [C] . 2018 : 47-50 . |
| MLA | Xu, Shu et al. "A Wide Tuning Range Low Kvco and Low Phase Noise VCO" . (2018) : 47-50 . |
| APA | Xu, Shu , Zhang, Wanrong , Shen, Pei , Xie, Hongyun , Jin, Dongyue , Zhang, Yin et al. A Wide Tuning Range Low Kvco and Low Phase Noise VCO . (2018) : 47-50 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
In this paper, an analytical model is developed for parasitic gate capacitance of the gate-all-around (GAA) silicon nanowire MOSFETs (SNWT) with asymmetrical top and bottom gates. The modeling results show that the gate-to-source/drain spacer significantly impacts on the parasitic capacitance especially in the case of top-to-bottom gate misalignment. It is found that the optimized top-to-bottom gate misalignment may achieve smaller C-p/C-total so as to improve the AC performance of GAA SNWT. The developed capacitance model is more suitable for the actual process for further device design optimization.
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| GB/T 7714 | Dong, Xiaoqiao , Yang, Yuancheng , Chen, Gong et al. Impact of Gate Asymmetry on Gate-All-Around Silicon Nanovvire Transistor Parasitic Capacitance [C] . 2018 : 296-298 . |
| MLA | Dong, Xiaoqiao et al. "Impact of Gate Asymmetry on Gate-All-Around Silicon Nanovvire Transistor Parasitic Capacitance" . (2018) : 296-298 . |
| APA | Dong, Xiaoqiao , Yang, Yuancheng , Chen, Gong , Sun, Shuang , Cai, Qifeng , Li, Xiaokang et al. Impact of Gate Asymmetry on Gate-All-Around Silicon Nanovvire Transistor Parasitic Capacitance . (2018) : 296-298 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
The impact of the variations of threshold voltage (V-th) and hold voltage (V-hold) of threshold switching (TS) selector in 1S1R crossbar array is investigated. Based on ON/OFF state I-V curves measurements from a large number of Ag-filament TS selectors, V-th and V-hold are extracted and their variations distribution expressions are obtained, which are then employed to evaluate the impact on read process and write process in 32 x 32 1S1R crossbar array under different bias schemes. The results indicate that V-th and V-hold variations of TS selector can lead to degradation of 1S1R array performance parameters, such as minimum read/write voltage, bit error rate (BER), and power consumption. For the read process, a small V-hold variation not only results in the minimum read voltage increasing but it also leads to serious degradation of BER. As the standard deviation of V-hold and V-th increases, the BER and the power consumption of 151R crossbar array under 1/2 bias, 1/3 bias, and floating scheme degrade, and the case under 1/2 bias tends to be more serious compared with other two schemes. For the write process, the minimum write voltage also increases with the variation of V-hold from small to large value. A slight increase of V-th standard deviation not only decreases write power efficiency markedly but also increases write power consumption. These results have reference significance to understand the voltage variation impacts and design of selector properly.
关键词 ：
crossbar array crossbar array RRAM RRAM threshold switching selector threshold switching selector variation variation
引用：
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| GB/T 7714 | Li, Yu-Jia , Wu, Hua-Qiang , Gao, Bin et al. Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array [J]. | CHINESE PHYSICS B , 2018 , 27 (11) . |
| MLA | Li, Yu-Jia et al. "Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array" . | CHINESE PHYSICS B 27 . 11 (2018) . |
| APA | Li, Yu-Jia , Wu, Hua-Qiang , Gao, Bin , Hua, Qi-Lin , Zhang, Zhao , Zhang, Wan-Rong et al. Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array . | CHINESE PHYSICS B , 2018 , 27 (11) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
In this paper, the impact of punch-through stop (PTS) doping and fin angle on the total ionizing dose (TID) response of 14rim bulk FinFETs are investigated by 3D TCAD simulation. The off-state leakage current (Ion) degradation induced by TID irradiation is effectively reduced with the increase of PTS doping concentration and depth. The optimized PTS doping condition is illustrated to improve the TID hardness of bulk FinFETs. Besides, the impact of fin angle on TIE) response is also investigated, which shows limited impact on the performance degradation. The results may provide guideline for radiation hardening process design of bulk FinFETs.
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| GB/T 7714 | Wang, Jia-Ning , An, Xia , Ren, Zhe-Xuan et al. The Impact of PTS Doping and Fin Angle on TID Response of 14-nm bulk FinFETs [C] . 2018 : 308-310 . |
| MLA | Wang, Jia-Ning et al. "The Impact of PTS Doping and Fin Angle on TID Response of 14-nm bulk FinFETs" . (2018) : 308-310 . |
| APA | Wang, Jia-Ning , An, Xia , Ren, Zhe-Xuan , Li, Gen-Song , Zhang, Wan-Rong , Huang, Ru . The Impact of PTS Doping and Fin Angle on TID Response of 14-nm bulk FinFETs . (2018) : 308-310 . |
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