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学者姓名：徐晨
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摘要 ：
We demonstrated an ultra-low noise polarization-maintaining (PM) single frequency fiber laser (SFFL) at 2 mu m. By suppressing the pump relative intensity noise using a feedback loop control, the RIN and frequency noise of the SFFL are simultaneously reduced, and the reduction is about 3 - 15 dB and 3 - 8.4 dB, respectively. After two stage Tm3+-doped PM fiber amplifier, the output power reached about 5.2 W. Meanwhile, the frequency noise almost has no increases, which is still below 100 Hz/root Hz after 13 Hz. And the frequency-tunable range is approximately 2 GHz with frequency response of 46 MHz/V.
关键词 ：
single frequency single frequency fiber laser fiber laser relative intensity noise relative intensity noise frequency noise frequency noise
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| GB/T 7714 | Zhang, Qian , Hou, Yubin , Song, Weihua et al. 2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors [C] . 2021 . |
| MLA | Zhang, Qian et al. "2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors" . (2021) . |
| APA | Zhang, Qian , Hou, Yubin , Song, Weihua , Wang, Xi , Peng, Zhigang , Chen, Xu et al. 2 mu m ultra-low relative intensity noise and frequency noise of single frequency fiber laser for next-generation gravitational wave detectors . (2021) . |
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摘要 ：
Text generation with sentiment control is difficult without fine-tuning or modifying the model architecture. Plug and Play Language Model (PPLM) utilizes an external sentiment classifier to update the hidden states of GPT-2 at each time step. It does not change the parameters but achieves competitive performance. However, fluency is impaired due to the instability of the hidden states. Moreover, the classifier is not strong because of the way it is trained with partial texts, hence it is difficult to guide the generation in the process. To solve the above problems, in this paper, we first propose a fixed threshold method based on the Valence-Arousal-Dominance (VAD) lexicon to decide whether to change a word, which keeps the fluency of the original LM to the greatest extent. Furthermore, for the improvement of sentiment alignment, we propose a dynamic threshold method that utilizes VAD-based loss to make the threshold dynamic. Experiments demonstrate that our methods outperform the baseline with a great margin significantly both on fluency and sentiment accuracy.
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| GB/T 7714 | Xu, Chen , Zhao, Jianyu , Li, Rang et al. Change or Not: A Simple Approach for Plug and Play Language Models on Sentiment Control [C] . 2021 : 15935-15936 . |
| MLA | Xu, Chen et al. "Change or Not: A Simple Approach for Plug and Play Language Models on Sentiment Control" . (2021) : 15935-15936 . |
| APA | Xu, Chen , Zhao, Jianyu , Li, Rang , Hu, Changjian , Xiao, Chuangbai . Change or Not: A Simple Approach for Plug and Play Language Models on Sentiment Control . (2021) : 15935-15936 . |
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摘要 ：
在显示领域,微型发光二极管(micro-LED)潜力巨大,有望引领下一代新型显示技术的发展方向,其显示性能在很多方面优于现有的液晶、有机发光二极管(OLED),但巨量的micro-LED像素点与驱动电路不在同一晶圆上制备,面临巨量转移的技术瓶颈.本文将新兴的石墨烯场效应晶体管作为驱动元件与氮化镓(GaN) micro-LED进行单片集成,因为二者直接制备于同一衬底上,所以从根源上规避了巨量转移的技术难题.此外,传统光刻工艺中紫外光刻胶直接接触石墨烯,会引入严重掺杂导致场效应晶体管性能较差,进而影响集成器件性能.本文提出了一种利用聚甲基丙烯酸甲酯(PMMA)薄膜作为保护层,直接旋涂紫外光刻胶进行...
关键词 ：
微型发光二极管 微型发光二极管 氮化镓 氮化镓 石墨烯 石墨烯 聚甲基丙烯酸甲酯 聚甲基丙烯酸甲酯
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| GB/T 7714 | 苑营阔 , 郭伟玲 , 杜在发 et al. 石墨烯晶体管优化制备工艺在单片集成驱动氮化镓微型发光二极管中的应用 [J]. | 物理学报 , 2021 , 70 (19) : 205-213 . |
| MLA | 苑营阔 et al. "石墨烯晶体管优化制备工艺在单片集成驱动氮化镓微型发光二极管中的应用" . | 物理学报 70 . 19 (2021) : 205-213 . |
| APA | 苑营阔 , 郭伟玲 , 杜在发 , 钱峰松 , 柳鸣 , 王乐 et al. 石墨烯晶体管优化制备工艺在单片集成驱动氮化镓微型发光二极管中的应用 . | 物理学报 , 2021 , 70 (19) , 205-213 . |
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摘要 ：
We investigated the frequency noise coupling mechanism of a 2 μm polarizationmaintaining single frequency fiber laser (SFFL) theoretically and experimentally. The coupling of pump's relative intensity noise (RIN) to frequency noise of a single-frequency high-gain silica fiber laser is shown experimentally to be consistent with a theoretical model where thermal expansion and thermo-optic effect mediate the coupling. The measured and theoretical frequency noise of the 2 μm SFFL with three pump sources is compared. We find using a 1550 nm single frequency laser pump source produces the lowest frequency noise, less than 100 Hz/ √Hz at frequencies higher than 100 Hz. © 2021 Optical Society of America.
关键词 ：
Fiber lasers Fiber lasers Pumping (laser) Pumping (laser) Silica Silica Thermal expansion Thermal expansion
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| GB/T 7714 | ZHANG, QIAN , HOU, YUBIN , SONG, WEIHUA et al. Pump RIN coupling to frequency noise of a polarization-maintaining 2 μm single frequency fiber laser [J]. | Optics Express , 2021 , 29 (3) : 3221-3229 . |
| MLA | ZHANG, QIAN et al. "Pump RIN coupling to frequency noise of a polarization-maintaining 2 μm single frequency fiber laser" . | Optics Express 29 . 3 (2021) : 3221-3229 . |
| APA | ZHANG, QIAN , HOU, YUBIN , SONG, WEIHUA , WANG, XI , BLAIR, CARL , CHEN, XU et al. Pump RIN coupling to frequency noise of a polarization-maintaining 2 μm single frequency fiber laser . | Optics Express , 2021 , 29 (3) , 3221-3229 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
In the information display field, micro-light-emitting diodes (micro-LEDs) possess high potentials and they are expected to lead the direction of developing the next-generation new display technologies. Their display performances are superior to those produced by the currently prevailing liquid crystal and organic light-emitting diode based technologies. However, the micro-LED pixels and their driving circuits are often fabricated on different wafers, which implies that the so-called mass transfer seems to be inevitable, thus facing an obvious bottleneck. In this paper, the emerging graphene field effect transistors are used as the driving elements and integrated onto the GaN micro-LEDs, which is because the pixels and drivers are prepared directly on the same wafer, the technical problem of mass transfer is fundamentally bypassed. Furthermore, in traditional lithographic process, the ultraviolet photoresist directly contacts the graphene, which introduces severe carrier doping, thereby leading to deteriorated graphene transistor properties. This, not surprisingly, further translates into lower performances of the integrated devices. In the present work, proposed is a technique in which the polymethyl methacrylate (PMMA) thin films act as both the protection layers and the interlayers when optimizing the graphene field effect transistor processing. The PMMA layers are sandwiched between the graphene and the ultraviolet photoresist, which is a brand new device fabrication process. First, the new process is tested in discrete graphene field effect transistors. Compared with those devices that are processed without the PMMA protection thin films, the graphene devices fabricated with the new technology typically show their Dirac point at a gate voltage (V-g) deviation from V-g = 0, that is, 22 V lower than their counterparts. In addition, an increase in the carrier mobility of 32% is also observed. Finally, after applying the newly developed fabrication process to the pixel-and-driver integrated devices, it is found that their performances are improved significantly. With this new technique, the ultraviolet photoresist no longer directly contacts the sensitive graphene channel because of the PMMA protection. The doping effect and the performance dropping are dramatically reduced. The technique is facile and cheap, and it is also applicable to two-dimensional materials besides graphene, such as MoS2 and h-BN. It is hoped that it is of some value for device engineers working in this field.
关键词 ：
gallium nitride gallium nitride graphene graphene micro-light emitting diode micro-light emitting diode polymethyl methacrylate polymethyl methacrylate
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| GB/T 7714 | Yuan Ying-Kuo , Guo Wei-Ling , Du Zai-Fa et al. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode [J]. | ACTA PHYSICA SINICA , 2021 , 70 (19) . |
| MLA | Yuan Ying-Kuo et al. "Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode" . | ACTA PHYSICA SINICA 70 . 19 (2021) . |
| APA | Yuan Ying-Kuo , Guo Wei-Ling , Du Zai-Fa , Qian Feng-Song , Liu Ming , Wang Le et al. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode . | ACTA PHYSICA SINICA , 2021 , 70 (19) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
In this paper, an auxiliary-model method is proposed for calculating equivalent input seismic loads in research of ground motions. This method can be used to investigate the local effect of 3D complex sites subjected to obliquely incident SV and P waves. Using this method, we build a fictitious auxiliary model along the normal direction of the boundary of the area of interest, with the model's localized geological features remaining the same along a vector normal to this boundary. This model is divided into five independent auxiliary models, which are then dynamically analyzed to obtain the equivalent input seismic loads. Unlike traditional methods, in this new technique, the mechanical behavior of the auxiliary model can be nonlinear, and its geometry can be arbitrary. In addition, a detailed description of the steps to calculate the equivalent input seismic loads is given. Numerical examples of incident plane-wave propagation at uniform sites with local features validate the effectiveness of this method. It is also applicable to elastic and non-elastic problems.
关键词 ：
equivalent input seismic load equivalent input seismic load free field motion free field motion oblique incidence oblique incidence seismic-wave input seismic-wave input topography effect topography effect
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| GB/T 7714 | Zhang, Xiaolong , Peng, Xiaobo , Li, Xiaojun et al. Three-Dimensional Seismic Response in Complex Site Conditions: A New Approach Based on an Auxiliary-Model Method [J]. | JOURNAL OF EARTH SCIENCE , 2021 , 32 (5) : 1152-1165 . |
| MLA | Zhang, Xiaolong et al. "Three-Dimensional Seismic Response in Complex Site Conditions: A New Approach Based on an Auxiliary-Model Method" . | JOURNAL OF EARTH SCIENCE 32 . 5 (2021) : 1152-1165 . |
| APA | Zhang, Xiaolong , Peng, Xiaobo , Li, Xiaojun , Zhou, Zhenghua , Xu, Chong , Dou, Zhan et al. Three-Dimensional Seismic Response in Complex Site Conditions: A New Approach Based on an Auxiliary-Model Method . | JOURNAL OF EARTH SCIENCE , 2021 , 32 (5) , 1152-1165 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Surface plasmon resonance (SPR) of metal nanostructures has broad application prospects in the fields of sensing, energy, catalysis and optics. This paper reports a graphene-assisted method for preparing large-scale single-crystal Ag(111) nanoparticle (NP) arrays based on the ion implantation technique. By surface periodic patterning treatment and annealing of the implanted sample, regularly arranged Ag NPs can be prepared on the sample surface. A new application for graphene is proposed, that is, as a perfect barrier layer to prevent metal atoms from evaporating or diffusing. All the Ag NPs show (111) crystal orientation. Besides, the Ag atoms are covered by graphene immediately when they precipitate from the substrate, which can prevent them from being oxidized. On the basis of this structure, as one of the applications of the metal SPR, we have measured the surface-enhanced Raman scattering effect and found that the G peak of the Raman spectrum of the graphene achieved about 20 times enhancement.
关键词 ：
Ag nanoparticles Ag nanoparticles annealing annealing graphene graphene ion implantation ion implantation surface-enhanced Raman scattering surface-enhanced Raman scattering
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| GB/T 7714 | Dong, Yibo , Xie, Yiyang , Hu, Liangchen et al. Graphene-assisted preparation of large-scale single-crystal Ag(111) nanoparticle arrays for surface-enhanced Raman scattering [J]. | NANOTECHNOLOGY , 2021 , 32 (2) . |
| MLA | Dong, Yibo et al. "Graphene-assisted preparation of large-scale single-crystal Ag(111) nanoparticle arrays for surface-enhanced Raman scattering" . | NANOTECHNOLOGY 32 . 2 (2021) . |
| APA | Dong, Yibo , Xie, Yiyang , Hu, Liangchen , Xu, Chen , Guo, Weiling , Pan, Guanzhong et al. Graphene-assisted preparation of large-scale single-crystal Ag(111) nanoparticle arrays for surface-enhanced Raman scattering . | NANOTECHNOLOGY , 2021 , 32 (2) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Graphene is an ideal material for wide spectrum detector owing to its special band structure, but its low light absorption and fast composite of photogenerated carriers lead to a weak response performance. In this paper, we designed a unique photoconductive graphene-InGaAs photodetector. The built-in electric field was formed between graphene and InGaAs, which can prolong the lifetime of photogenerated carriers and improve the response of devices by confining the holes. Compared with graphene-Si structure, a higher built-in electric field and reach to 0.54 eV is formed. It enables the device to achieve a responsivity of 60 AW(-1) and a photoconductive gain of 79.4 at 792 nm. In the 1550 nm communication band, the responsivity of the device is also greater than 10 AW(-1) and response speed is less than 2 ms. Meanwhile, the saturation phenomenon of light response was also found in this photoconductive graphene heterojunction detector during the experiment, we have explained the phenomenon by the capacitance theory of the built-in electric field, and the maximum optical responsivity of the detector is calculated theoretically, which is in good agreement with the measurement result. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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| GB/T 7714 | Hu, Liangchen , Dong, Yibo , Deng, Jun et al. High responsivity graphene-InGaAs near-infrared photodetector realized by hole trapping and its response saturation mechanism [J]. | OPTICS EXPRESS , 2021 , 29 (15) : 23234-23243 . |
| MLA | Hu, Liangchen et al. "High responsivity graphene-InGaAs near-infrared photodetector realized by hole trapping and its response saturation mechanism" . | OPTICS EXPRESS 29 . 15 (2021) : 23234-23243 . |
| APA | Hu, Liangchen , Dong, Yibo , Deng, Jun , Xie, Yiyang , Ma, Xiaochen , Qian, Fengsong et al. High responsivity graphene-InGaAs near-infrared photodetector realized by hole trapping and its response saturation mechanism . | OPTICS EXPRESS , 2021 , 29 (15) , 23234-23243 . |
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摘要 ：
The orthogonality among optical beams with different orbital angular momentum (OAM) modes presents a new perspective as independent data-carrying channels for multiplexing and demultiplexing. In particular, the theoretically infinite topological charge of OAM beam promises the unbounded capacity in communication systems. As a key part for the advancement of OAM technologies, OAM source has attracted considerable interest and experienced a rapid development. Nevertheless, conventional approaches to create OAM modes mainly rely on the use of bulky optical devices and external laser source, preventing their implementation into a miniaturized system. As a contrast, on-chip generation of OAM beams with a built-in source stands out with several advantages, including small footprint, compactness, portability, and high-power efficiency. In this work, a versatile approach to directly produce OAM modes with on-demand characteristics on a chip is demonstrated. Featuring the judicious combination of the emerging dielectric metasurface with the standard vertical cavity surface-emitting laser (VCSEL) platform, the approach represents a feasible solution to the wide implementation of wafer-level OAM emitters for optoelectronic integrations. Prototype laser chips for the generation of both individual OAM beam and OAM array with novel functionalites, such as controllable directionality and spatially varying topological charge and distribution, are systematically presented.
关键词 ：
metasurfaces metasurfaces on-chip integration on-chip integration optical vortex optical vortex orbital angular momentum orbital angular momentum vertical cavity surface-emitting lasers vertical cavity surface-emitting lasers
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| GB/T 7714 | Fu, Pan , Ni, Pei-Nan , Wang, Qiu-Hua et al. Multichannel Generations of Orbital Angular Momentum Modes with On-Demand Characteristics on a Chip [J]. | ADVANCED OPTICAL MATERIALS , 2021 . |
| MLA | Fu, Pan et al. "Multichannel Generations of Orbital Angular Momentum Modes with On-Demand Characteristics on a Chip" . | ADVANCED OPTICAL MATERIALS (2021) . |
| APA | Fu, Pan , Ni, Pei-Nan , Wang, Qiu-Hua , Liu, Yu-Fei , Wu, Bo , Chen, Pei-Pei et al. Multichannel Generations of Orbital Angular Momentum Modes with On-Demand Characteristics on a Chip . | ADVANCED OPTICAL MATERIALS , 2021 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Metasurfaces offer complete control of optical wavefront at the subwavelength scale, advancing a new class of artificial planar optics, including lenses, waveplates, and holograms, with unprecedented merits over conventional optical components. In particular, the ultrathin, flat, and compact characteristics of metasurfaces facilitate their integration with semiconductor devices for the development of miniaturized and multifunctional optoelectronic systems. In this work, generation of structured light is implemented at an ultracompact wafer-level through the monolithic integration of metasurface with standard vertical cavity surface-emitting lasers (VCSELs). This work opens new perspectives for the design of structured light systems with compactness, lightweight, and scalability. Ultracompact beam structured laser chips with versatile functionalities are experimentally demonstrated, including multichannel beams array generation, on-chip large-angle beam steering up to 60 degrees, and wafer-level holographic beam shaping with a wide field of view (about 124 degrees). The results will promote the development of compact light structuring systems with great potential in 3D imaging, displays, robotic vision, human-computer interaction, and augmented/virtual reality.
关键词 ：
metasurfaces metasurfaces optoelectronic integrations optoelectronic integrations semiconductor lasers semiconductor lasers structured light structured light vertical cavity surface-emitting lasers vertical cavity surface-emitting lasers
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| GB/T 7714 | Wang, Qiu-Hua , Ni, Pei-Nan , Xie, Yi-Yang et al. On-Chip Generation of Structured Light Based on Metasurface Optoelectronic Integration [J]. | LASER & PHOTONICS REVIEWS , 2021 , 15 (3) . |
| MLA | Wang, Qiu-Hua et al. "On-Chip Generation of Structured Light Based on Metasurface Optoelectronic Integration" . | LASER & PHOTONICS REVIEWS 15 . 3 (2021) . |
| APA | Wang, Qiu-Hua , Ni, Pei-Nan , Xie, Yi-Yang , Kan, Qiang , Chen, Pei-Pei , Fu, Pan et al. On-Chip Generation of Structured Light Based on Metasurface Optoelectronic Integration . | LASER & PHOTONICS REVIEWS , 2021 , 15 (3) . |
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