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学者姓名：孟军华
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摘要 ：
本申请公开了一种甜菜碱盐酸盐改性的SnO2基钙钛矿太阳能电池及制备方法，所述太阳能电池的制备过程如下：(1)形成甜菜碱盐酸盐改性的SnO2溶液；(2)在洁净的透明导电基底上制备甜菜碱盐酸盐改性的SnO2电子传输层；(3)在电子传输层上制备PbI2薄膜；(4)在PbI2薄膜上制备FAxMA1‑xPbI3钙钛矿吸光层；(5)在吸光层上制备Spiro‑OMeTAD空穴传输层；(6)在空穴传输层上依次蒸镀MoO3和金属Ag电极，即得该钙钛矿太阳能电池。本发明通过甜菜碱盐酸盐改性的SnO2可以优化电子传输层与钙钛矿层的能级匹配，减少界面的非辐射复合，显著提高太阳能电池的开路电压和光电转换效率。
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| GB/T 7714 | 孟军华 , 李艳敏 , 吴瑞 . 一种甜菜碱盐酸盐改性的SnO2基钙钛矿太阳能电池及制备方法 : CN202310181265.5[P]. | 2023-02-24 . |
| MLA | 孟军华 等. "一种甜菜碱盐酸盐改性的SnO2基钙钛矿太阳能电池及制备方法" : CN202310181265.5. | 2023-02-24 . |
| APA | 孟军华 , 李艳敏 , 吴瑞 . 一种甜菜碱盐酸盐改性的SnO2基钙钛矿太阳能电池及制备方法 : CN202310181265.5. | 2023-02-24 . |
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摘要 ：
一种EDTA‑2Na改性电子传输层的钙钛矿太阳能电池及其制备方法属于钙钛矿太阳能电池领域。该钙钛矿太阳能电池自下而上依次包括：衬底、透明导电电极、电子传输层、钙钛矿吸收层、空穴传输层、氧化钼层、顶金属电极，其中电子传输层材料为EDTA‑2Na改性的SnO2。本发明采用EDTA‑2Na对SnO2电子传输层进行改性，一方面EDTA‑2Na中的羧基能够通过酯化反应有效钝化SnO2表面由于氧空位而形成的羟基；另一方面EDTA‑2Na中的Na+能够通过热扩散进入到钙钛矿层中，从而钝化其中的负电荷缺陷，减少由于缺陷所引起的非辐射复合，显著提升EDTA‑2Na改性钙钛矿太阳能电池的光电转换效率和开路电压。
引用：
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| GB/T 7714 | 孟军华 , 吴瑞 , 李艳敏 . 一种EDTA-2Na改性电子传输层的钙钛矿太阳能电池及其制备方法 : CN202211139919.X[P]. | 2022-09-20 . |
| MLA | 孟军华 等. "一种EDTA-2Na改性电子传输层的钙钛矿太阳能电池及其制备方法" : CN202211139919.X. | 2022-09-20 . |
| APA | 孟军华 , 吴瑞 , 李艳敏 . 一种EDTA-2Na改性电子传输层的钙钛矿太阳能电池及其制备方法 : CN202211139919.X. | 2022-09-20 . |
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摘要 ：
Monoclinic β phase Ga2O3 has been considered as a promising candidate for next generation radio frequency and high-power devices because of its ultrawide bandgap and high breakdown field. The development of epitaxial growth techniques and the synthesis of high quality β-Ga2O3 thin films are crucial for the device applications. In this work, the heteroepitaxial β-Ga2O3 thin films were grown on sapphire (0001) substrates by low pressure chemical vapor deposition. The influence of growth parameters such as the source/substrate temperatures, the oxygen/Ar gas flow rates, and the surface morphology of substrate on the resultant crystallinity and surface roughness of the β-Ga2O3 films were investigated. The β-Ga2O3 heteroepitaxial layer on sapphire exhibits an RMS roughness of 1.82 nm, an XRD rocking curve of 1.18°, and a growth rate of 0.72 μm/h. The β-Ga2O3 film grown on the buffer layer exhibit a smoother surface, whereas the chemical etching and annealing lead to an improved crystallinity and a rough surface. However, there is a trade-off between the crystallization and the surface roughness. © 2021 Elsevier Ltd
关键词 ：
Thin films Thin films Substrates Substrates Low pressure chemical vapor deposition Low pressure chemical vapor deposition Flow of gases Flow of gases Surface roughness Surface roughness Buffer layers Buffer layers Epitaxial growth Epitaxial growth Growth rate Growth rate Morphology Morphology Gallium compounds Gallium compounds Crystallinity Crystallinity Sapphire Sapphire Surface morphology Surface morphology
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| GB/T 7714 | Jiao, Yujia , Jiang, Qian , Meng, Junhua et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition [J]. | Vacuum , 2021 , 189 . |
| MLA | Jiao, Yujia et al. "Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition" . | Vacuum 189 (2021) . |
| APA | Jiao, Yujia , Jiang, Qian , Meng, Junhua , Zhao, Jinliang , Yin, Zhigang , Gao, Hongli et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition . | Vacuum , 2021 , 189 . |
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摘要 ：
The growth of trace amount of niobium (Nb) doped beta-Ga2O3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped beta-Ga2O3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal-semiconductor-metal structure based on trace amount of Nb doped beta-Ga2O3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of beta-Ga2O3 photodetector can be improved by doping trace amount of Nb in beta-Ga2O3 thin film.
关键词 ：
Deep ultraviolet photodetector Deep ultraviolet photodetector beta-Ga2O3 beta-Ga2O3 Photo-response Photo-response Nb-doped Nb-doped
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| GB/T 7714 | Zhang, H. , Deng, J. X. , Zhang, Q. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response [J]. | OPTIK , 2021 , 243 . |
| MLA | Zhang, H. et al. "Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response" . | OPTIK 243 (2021) . |
| APA | Zhang, H. , Deng, J. X. , Zhang, Q. , Wang, X. L. , Meng, J. H. , Xu, Z. Y. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response . | OPTIK , 2021 , 243 . |
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摘要 ：
Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA.W-1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.
关键词 ：
two-dimensional materials two-dimensional materials doping doping hexagonal boron-carbon-nitrogen hexagonal boron-carbon-nitrogen hexagonal boron nitride hexagonal boron nitride ion beam sputtering deposition ion beam sputtering deposition deep ultraviolet photodetectors deep ultraviolet photodetectors
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| GB/T 7714 | Wang, Ye , Meng, Junhua , Tian, Yan et al. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride [J]. | ACS APPLIED MATERIALS & INTERFACES , 2020 , 12 (24) : 27361-27367 . |
| MLA | Wang, Ye et al. "Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride" . | ACS APPLIED MATERIALS & INTERFACES 12 . 24 (2020) : 27361-27367 . |
| APA | Wang, Ye , Meng, Junhua , Tian, Yan , Chen, Yanan , Wang, Gaokai , Yin, Zhigang et al. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride . | ACS APPLIED MATERIALS & INTERFACES , 2020 , 12 (24) , 27361-27367 . |
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摘要 ：
Surface plasmonic effect of metal nanoparticles is an effective method to improve the power conversion efficiency (PCE) of solar cells. In this work, the PCE of bulk heterojunction (BHJ) polymer solar cells was improved by Au nanoparticles (NPs). The Au NPs were embedded into PEDOT:PSS hole transport layer by spin coating on the ITO substrates. The Au NPs with a diameter of similar to 16 nm were prepared by the micellar method using polystyrene-block-poly (2-vinylpyridine) diblock polymer. The Au NPs prepared by this method are distributed uniformly in size and without agglomeration on the substrates. From both experimental and theoretical results, it can be seen that the light absorption of the active layer was increased because of the surface plasmonic effect of Au NPs. Meanwhile, the carrier transport performance of PEDOT:PSS was enhanced with introduced Au NPs. As a result, the PCE of BHJ solar cells was improved from 2.81 to 3.25% by incorporating Au NPs.
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| GB/T 7714 | Gao, Hongli , Meng, Junhua , Sun, Junjie et al. Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2020 , 31 (13) : 10760-10767 . |
| MLA | Gao, Hongli et al. "Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31 . 13 (2020) : 10760-10767 . |
| APA | Gao, Hongli , Meng, Junhua , Sun, Junjie , Deng, Jinxiang . Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2020 , 31 (13) , 10760-10767 . |
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摘要 ：
Two-dimensional (2D) hexagonal boron nitride (h-BN) is considered as an ideal dielectric layer or substrate for other 2D heterostructure electronic devices. However, reported 2D h-BN films consist mostly of small sized and randomly oriented h-BN domains, resulting in a high density of grain boundaries during coalescence. Here, we report the growth of unidirectionally aligned h-BN domains in a large area on the Ni(111) epitaxial thin film on MgO(111) substrate by ion beam sputtering deposition. It is found that the in-plane orientation of the underlying Ni thin film, which can be controlled by its deposition temperature, plays a key role in the h-BN domain alignment. Furthermore, density functional theory calculations are performed to determine the favorable configuration of the triangular shaped h-BN domains on Ni(111). This work provides a promising approach to prepare unidirectionally aligned h-BN domains in a large area, and thus it is possible to achieve wafer-scale single crystal h-BN by stitching these h-BN domains.
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| GB/T 7714 | Meng, Junhua , Ming, Bangming , Zhang, Xingwang et al. Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films [J]. | CRYSTAL GROWTH & DESIGN , 2019 , 19 (1) : 453-459 . |
| MLA | Meng, Junhua et al. "Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films" . | CRYSTAL GROWTH & DESIGN 19 . 1 (2019) : 453-459 . |
| APA | Meng, Junhua , Ming, Bangming , Zhang, Xingwang , Gao, Menglei , Cheng, Likun , Yin, Zhigang et al. Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films . | CRYSTAL GROWTH & DESIGN , 2019 , 19 (1) , 453-459 . |
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摘要 ：
Quasi-two-dimensional (quasi-2D) perovskites are efficient luminescent materials due to their self-assembled quantum-well structure. We found that the organic cations have a significant effect on the structure and performance of quasi-2D perovskite-based light-emitting diodes (LEDs). Two classic organic cations, formamidinium (FA) and methylammonium (MA), were chosen for investigation. The MA-based quasi-2D perovskite has the largest band-gap n = 1 phase and a photoluminescence quantum yield (PLQY) as high as 85.3%, whereas this n = 1 phase is almost absent in the FA-based quasi-2D perovskite, which shows a moderate PLQY of 73.5%. However, the FA-based perovskite shows a much higher external quantum efficiency (15.4%) than the MA-based perovskite (0.93%) in LEDs. The lower electroluminescence efficiency of the MA-based perovskite could be ascribed to the poor hole injection. These results showed the importance of rational design of the quasi-2D perovskite for efficient LEDs.
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| GB/T 7714 | Yang, Xiaolei , Chu, Zema , Meng, Junhua et al. Effects of Organic Cations on the Structure and Performance of Quasi-Two-Dimensional Perovskite-Based Light-Emitting Diodes [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2019 , 10 (11) : 2892-2897 . |
| MLA | Yang, Xiaolei et al. "Effects of Organic Cations on the Structure and Performance of Quasi-Two-Dimensional Perovskite-Based Light-Emitting Diodes" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 10 . 11 (2019) : 2892-2897 . |
| APA | Yang, Xiaolei , Chu, Zema , Meng, Junhua , Yin, Zhigang , Zhang, Xingwang , Deng, Jinxiang et al. Effects of Organic Cations on the Structure and Performance of Quasi-Two-Dimensional Perovskite-Based Light-Emitting Diodes . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2019 , 10 (11) , 2892-2897 . |
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摘要 ：
Two-dimensional (2D) hexagonal boron nitride (h-BN) is a promising candidate as a supporting substrate, a gate dielectric and a protecting layer for 2D electronic and photonic devices. Transition metals were usually adopted as substrates for the synthesis of 2D h-BN, however, catalyst-free growth of high-quality h-BN on dielectric substrates is still very challenging. Herein, we report the catalyst-free growth of 2D h-BN few-layers on sapphire substrates by ion beam sputtering deposition (IBSD). We find that the h-BN grown under conventional conditions is nonstoichiometric with an excess of B element, resulting in a large number of N vacancy defects and poor crystalline quality. The wafer-scale high quality 2D h-BN layers were synthesized on sapphire by the combination of surface nitridation and N+ sputtering. Furthermore, the 2D h-BN few-layers on sapphire were used to fabricate deep ultraviolet photodetectors, which exhibit better performance in comparison with the devices fabricated by the transferred h-BN.
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| GB/T 7714 | Gao, Menglei , Meng, Junhua , Chen, Yanan et al. Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2019 , 7 (47) : 14999-15006 . |
| MLA | Gao, Menglei et al. "Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors" . | JOURNAL OF MATERIALS CHEMISTRY C 7 . 47 (2019) : 14999-15006 . |
| APA | Gao, Menglei , Meng, Junhua , Chen, Yanan , Ye, Siyuan , Wang, Ye , Ding, Congyu et al. Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors . | JOURNAL OF MATERIALS CHEMISTRY C , 2019 , 7 (47) , 14999-15006 . |
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| GB/T 7714 | Yang, Xiaolei , Zhang, Xingwang , Deng, Jinxiang et al. Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation (vol 9, 2018) [J]. | NATURE COMMUNICATIONS , 2018 , 9 . |
| MLA | Yang, Xiaolei et al. "Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation (vol 9, 2018)" . | NATURE COMMUNICATIONS 9 (2018) . |
| APA | Yang, Xiaolei , Zhang, Xingwang , Deng, Jinxiang , Chu, Zema , Jiang, Qi , Meng, Junhua et al. Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation (vol 9, 2018) . | NATURE COMMUNICATIONS , 2018 , 9 . |
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