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学者姓名：王晓蕾
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摘要 ：
Developing a single-phase self-rectifying memristor is desirable and functionally adaptive to dynamic environmental stimuli variations. Here, the authors report a single phase CuInP2S6 based memristor with continuously tunable current rectifying. Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.
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| GB/T 7714 | Jiang, Xingan , Wang, Xueyun , Wang, Xiaolei et al. Manipulation of current rectification in van der Waals ferroionic CuInP2S6 [J]. | NATURE COMMUNICATIONS , 2022 , 13 (1) . |
| MLA | Jiang, Xingan et al. "Manipulation of current rectification in van der Waals ferroionic CuInP2S6" . | NATURE COMMUNICATIONS 13 . 1 (2022) . |
| APA | Jiang, Xingan , Wang, Xueyun , Wang, Xiaolei , Zhang, Xiangping , Niu, Ruirui , Deng, Jianming et al. Manipulation of current rectification in van der Waals ferroionic CuInP2S6 . | NATURE COMMUNICATIONS , 2022 , 13 (1) . |
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摘要 ：
Achieving highly efficient spin injection has been a challenging problem for a long time in spin logic devices. The chiral-induced spin selectivity (CISS) effect could induce spin polarization of electron transmission by chiral structure, providing a promising solution to resolve the above bottleneck. In this work, the significant CISS effect by self-assembled chiral organic molecules with helical structure was achieved on the copper (Cu) substrate covered with gold (Au) layer. We find that the spin polarization induced by the chiral molecules is more than 80%. Serving as an ultra efficient spin filter, the chiral organic molecules is demonstrated to be an effective way to generate pure spin currents and achieve highly efficient spin injection without ferromagnetic electrodes or external magnetic field. Based on these properties, a CISS based reconfigurable logic device is proposed. Due to the high spin injection efficiency, this CISS based device can realize 6 different logic operations with low energy consumption (1.2 pJ) and high speed (3.6 ns).
关键词 ：
self-assembled monolayer self-assembled monolayer Chiral organic molecules Chiral organic molecules Atomic measurements Atomic measurements Voltage measurement Voltage measurement spin injection efficiency spin injection efficiency Superconducting magnets Superconducting magnets Magnetic moments Magnetic moments chiral-induced spin selectivity chiral-induced spin selectivity Pollution measurement Pollution measurement Voltage control Voltage control reconfigurable logic device reconfigurable logic device Switches Switches
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| GB/T 7714 | Yang, Qianqian , Zhang, Zhizhong , Jiang, Xing'an et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device [J]. | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (11) : 1862-1865 . |
| MLA | Yang, Qianqian et al. "Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device" . | IEEE ELECTRON DEVICE LETTERS 43 . 11 (2022) : 1862-1865 . |
| APA | Yang, Qianqian , Zhang, Zhizhong , Jiang, Xing'an , Wang, Xiaolei , Wang, Xueyun , Shang, Zixuan et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device . | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (11) , 1862-1865 . |
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摘要 ：
Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin-related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral-induced spin selectivity (CISS) was discovered surprisingly that non-magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini-review points out a key technology of information storage for future spintronic devices without magnetic components.
关键词 ：
molecular chemistry molecular chemistry spintronic devices spintronic devices spin injection spin injection information storage information storage chiral-induced spin selectivity chiral-induced spin selectivity
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| GB/T 7714 | Shang, Zixuan , Liu, Tianhan , Yang, Qianqian et al. Chiral-Molecule-Based Spintronic Devices [J]. | SMALL , 2022 , 18 (32) . |
| MLA | Shang, Zixuan et al. "Chiral-Molecule-Based Spintronic Devices" . | SMALL 18 . 32 (2022) . |
| APA | Shang, Zixuan , Liu, Tianhan , Yang, Qianqian , Cui, Shuainan , Xu, Kailin , Zhang, Yu et al. Chiral-Molecule-Based Spintronic Devices . | SMALL , 2022 , 18 (32) . |
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摘要 ：
本发明公开了非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用。本发明两相共存Mn3Ge薄膜包括非共线反铁磁Mn3Ge六角相与铁磁Mn3Ge四方相两相共存。本发明两相共存Mn3Ge薄膜的制备方法及图案化的两相共存Mn3Ge霍尔bar的制备方法，包括如下步骤：在衬底上采用磁控溅射方法通过调节生长温度生长，得到两相共存Mn3Ge薄膜；对两相共存Mn3Ge薄膜进行光刻胶匀胶、曝光、显影、刻蚀、去胶，即得到图案化的两相共存Mn3Ge霍尔bar。本发明通过调节生长温度实现了非公线反铁磁与铁磁两相共存Mn3Ge薄膜的可控生长与反常霍尔效应的调控，从而获得了具有大反常霍尔效应和抗磁干扰性能优异的自旋存储材料，能够大大拓展Mn3Ge薄膜在自旋存储领域的应用。
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| GB/T 7714 | 王晓蕾 , 崔帅楠 , 杨倩倩 et al. 非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用 : CN202211316081.7[P]. | 2022-10-26 . |
| MLA | 王晓蕾 et al. "非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用" : CN202211316081.7. | 2022-10-26 . |
| APA | 王晓蕾 , 崔帅楠 , 杨倩倩 , 赵金良 . 非共线反铁磁与铁磁两相共存Mn3Ge薄膜及其制备方法与应用 : CN202211316081.7. | 2022-10-26 . |
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摘要 ：
本发明公开了一种自旋轨道矩磁阻式随机存储器及其制备方法与应用。本发明自旋轨道矩磁阻式随机存储器，包括：衬底和在衬底上依次层叠的非共线反铁磁层和磁阻隧道结；其中，磁阻隧道结包括由下至上依次层叠的遂穿层和铁磁性层。本发明制备方法中，采用磁控溅射方法依次形成非共线反铁磁层的材料层、磁阻隧道结的各材料层，对各材料层采用光刻技术和电子束曝光技术进行图案化，形成非共线反铁磁层以及磁阻隧道结，即得到自旋轨道矩磁阻式随机存储器。本发明当电流通入具有应力梯度的非共线反铁磁层中，将产生自旋轨道耦合，从而改变非共线反铁磁层的的磁矩方向，实现隧道结的无外场写入功能。
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| GB/T 7714 | 王晓蕾 , 崔帅楠 , 杨倩倩 et al. 一种自旋轨道矩磁阻式随机存储器及其制备方法与应用 : CN202211316068.1[P]. | 2022-10-26 . |
| MLA | 王晓蕾 et al. "一种自旋轨道矩磁阻式随机存储器及其制备方法与应用" : CN202211316068.1. | 2022-10-26 . |
| APA | 王晓蕾 , 崔帅楠 , 杨倩倩 , 尚紫璇 . 一种自旋轨道矩磁阻式随机存储器及其制备方法与应用 : CN202211316068.1. | 2022-10-26 . |
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摘要 ：
Lateral effect photodiodes sense the position of a laser beam by measuring the change of current between opposite anodes and a common cathode. They either require a bias current or the current is photogenerated. In either case, their linearity is affected by the non-uniformity of the current distribution between the anodes. We here propose a bias-free, lateral photo-diode, which consists of a resistive layer forming an extended Schottky contact to an intrinsic semiconductor. In our sensor, the photo-generated carriers do not diffuse laterally. Rather, their localization under the laser-beam results in a reduction of the barrier height due to image force effect. An open-circuit voltage appears between two opposite electrodes that is linear with the laser-beam position. A tetra-lateral configuration, with four anodes at the edges of a square-shaped sensor, allows sensing in two dimensions. (c) 2021 Elsevier B.V. All rights reserved.
关键词 ：
Photo-detectors Photo-detectors Position sensing Position sensing Schottky junctions Schottky junctions Image force effect Image force effect
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| GB/T 7714 | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui et al. A bias-free, lateral effect position sensor photo-detector [J]. | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
| MLA | Wang, Xiaolei et al. "A bias-free, lateral effect position sensor photo-detector" . | SENSORS AND ACTUATORS A-PHYSICAL 330 (2021) . |
| APA | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui , Yang, Qianqian , Cui, Shuainan , Zhang, Jie et al. A bias-free, lateral effect position sensor photo-detector . | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
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摘要 ：
One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III-V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.
关键词 ：
magnetic semiconductors magnetic semiconductors magnetic properties magnetic properties co-doping co-doping ion implantation ion implantation
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| GB/T 7714 | Yuan, Ye , Xie, Yufang , Yuan, Ning et al. The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting [J]. | MATERIALS , 2021 , 14 (15) . |
| MLA | Yuan, Ye et al. "The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting" . | MATERIALS 14 . 15 (2021) . |
| APA | Yuan, Ye , Xie, Yufang , Yuan, Ning , Wang, Mao , Heller, Rene , Kentsch, Ulrich et al. The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting . | MATERIALS , 2021 , 14 (15) . |
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摘要 ：
Among the efforts to improve the performances of microlasers, optimization of the gain properties and cavity parameters of these lasers has attracted significant attention recently. Distributed feedback lasers, as one of the most promising candidate technologies for electrically pumped microlasers, can be combined with dual-gratings. This combination provides additional freedom for the design of the laser cavity. Here, a holographic dual-grating is designed to improve the distributed feedback laser performance. The holographic dual-grating laser consists of a colloidal quantum dot film with two parallel gratings, comprising first-order (210 nm) and second-order (420 nm) gratings that can be fabricated easily using a combination of spin coating and interference lithography. The feedback and the output from the cavity are controlled using the first-order grating and the second-order grating, respectively. Through careful design and analysis of the dual-grating, a balance is achieved between the feedback and the cavity output such that the lasing threshold based on the dual-grating is nearly half the threshold of conventional distributed feedback lasers. Additionally, the holographic dual-grating laser shows a high level of stability because of the high stability of the colloidal quantum dots against photobleaching.
关键词 ：
microlasers microlasers dual-gratings dual-gratings holographic holographic
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| GB/T 7714 | Zhai, Tianrui , Han, Liang , Ma, Xiaojie et al. Low-Threshold Microlasers Based on Holographic Dual-Gratings [J]. | NANOMATERIALS , 2021 , 11 (6) . |
| MLA | Zhai, Tianrui et al. "Low-Threshold Microlasers Based on Holographic Dual-Gratings" . | NANOMATERIALS 11 . 6 (2021) . |
| APA | Zhai, Tianrui , Han, Liang , Ma, Xiaojie , Wang, Xiaolei . Low-Threshold Microlasers Based on Holographic Dual-Gratings . | NANOMATERIALS , 2021 , 11 (6) . |
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摘要 ：
Because of its limited light field mode and high Q value, the whispering-gallery-mode (WGM) cavity has been widely studied. In this study, we propose a simple, rapid, low-cost and no-manufacturing technology method that we call the drip-coating method to obtain an irregular cavity with arbitrary boundaries. By using polyvinyl alcohol (PVA) solution doped with rhodamine 6G, the irregular cavity with arbitrary boundaries was drip-coated on a high-reflection mirror, forming a WGM laser. The sample was pumped with a 532 nm pulsed laser, and the single-mode WGM and multi-WGM lasing were obtained. All WGMs are the vertical oscillation modes, which originate from both the total internal reflection of the PVA/air interface and vertical reflection of the PVA/mirror interface. The other boundaries of the cavity were not involved in the reflection and could have any shape. The mechanism of producing single-mode lasing is due to the action of the loss-gain cavity. Multi-WGM lasing is attributed to at least two groups of different WGMs existing in an irregular cavity. This can be confirmed by using a microsphere model and intensity correlation method. These results may provide an alternative for the design of WGM lasers.
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| GB/T 7714 | Su, Dan , Zhai, Tianrui , Ge, Kun et al. WGM lasing in irregular cavities with arbitrary boundaries [J]. | NANOSCALE , 2021 , 13 (43) : 18349-18355 . |
| MLA | Su, Dan et al. "WGM lasing in irregular cavities with arbitrary boundaries" . | NANOSCALE 13 . 43 (2021) : 18349-18355 . |
| APA | Su, Dan , Zhai, Tianrui , Ge, Kun , Zhang, Shuai , Xu, Zhiyang , Tong, Junhua et al. WGM lasing in irregular cavities with arbitrary boundaries . | NANOSCALE , 2021 , 13 (43) , 18349-18355 . |
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摘要 ：
Topological Weyl semimetals have attracted considerable interest because they manifest underlying physics and device potential in spintronics. Large anomalous Hall effect (AHE) in non-collinear antiferromagnets (AFMs) represents a striking Weyl phase, which is associated with Bloch-band topological features. In this work, we report robust AHE and Lifshitz transition in high-quality Weyl semimetal Mn3Ge thin film, comprising stacked Kagome lattice and chiral antiferromagnetism. We successfully achieved giant AHE in our Mn3Ge film, with a strong Berry curvature enhanced by the Weyl phase. The enormous coercive field HC in our AHE curve at 5 K reached an unprecedented 5.3 T among hexagonal Mn3X systems. Our results provide direct experimental evidence of an electronic topological transition in the chiral AFMs. The temperature was demonstrated to play an efficient role in tuning the carrier concentration, which could be quantitatively determined by the two-band model. The electronic band structure crosses the Fermi energy level and leads to the reversal of carrier type around 50 K. The results not only offer new functionality for effectively modulating the Fermi level location in topological Weyl semimetals but also present a promising route of manipulating the carrier concentration in antiferromagnetic spintronic devices.
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| GB/T 7714 | Wang Xiaolei , Pan Dong , Zeng Qingqi et al. Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge. [J]. | Nanoscale , 2021 , 13 (4) : 2601-2608 . |
| MLA | Wang Xiaolei et al. "Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge." . | Nanoscale 13 . 4 (2021) : 2601-2608 . |
| APA | Wang Xiaolei , Pan Dong , Zeng Qingqi , Chen Xue , Wang Hailong , Zhao Duo et al. Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge. . | Nanoscale , 2021 , 13 (4) , 2601-2608 . |
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