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学者姓名：蒋毅坚
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摘要 ：
一种制备β‑Ga2O3微米带的方法涉及半导体材料和光学技术领域。其以Ga2O3粉末和石墨粉为原料；球磨烘干、200目过筛；装入长条橡胶气球，压实封闭、抽真空，等静压下制成粗细、密度均匀的圆柱形料棒；将圆柱形料棒放入光学浮区炉中，设置浮区炉卤钨灯输出功率为720W/h，通入氧气，光照一定时间，经过光学气化过饱和析出的生长过程，制备β‑Ga2O3微米带，该微米带尺寸较大，形貌完整，可有效构建光电器件。加快了氧化镓的一维微纳结构生长的时间，节约了能源，降低了生产成本。
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| GB/T 7714 | 蒋毅坚 , 潘永漫 , 闫胤洲 et al. 一种制备β-Ga2O3微米带的方法 : CN202210859639.X[P]. | 2022-07-21 . |
| MLA | 蒋毅坚 et al. "一种制备β-Ga2O3微米带的方法" : CN202210859639.X. | 2022-07-21 . |
| APA | 蒋毅坚 , 潘永漫 , 闫胤洲 , 王强 . 一种制备β-Ga2O3微米带的方法 : CN202210859639.X. | 2022-07-21 . |
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摘要 ：
本发明公开了一种级联微球透镜增强拉曼探针的制备方法。通过光纤拉锥以及激光辐照熔融烧制出一级光学微球透镜，然后该透镜通过沾取很薄的紫外胶黏连了一个直径等于其聚焦光斑的二级光学微球透镜，最后利用紫外光固化得到了级联微球透镜增强拉曼探针。本制造方法获得的级联微球透镜增强拉曼探针具有优异性能的拉曼增强效应，在低成本、高灵敏度拉曼光谱痕量检测场景中具有广阔的应用前景。
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| GB/T 7714 | 闫胤洲 , 米彦霖 , 蒋毅坚 . 一种级联微球透镜增强拉曼探针的制备方法 : CN202210477557.9[P]. | 2022-05-05 . |
| MLA | 闫胤洲 et al. "一种级联微球透镜增强拉曼探针的制备方法" : CN202210477557.9. | 2022-05-05 . |
| APA | 闫胤洲 , 米彦霖 , 蒋毅坚 . 一种级联微球透镜增强拉曼探针的制备方法 : CN202210477557.9. | 2022-05-05 . |
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摘要 ：
本发明公开了一种应用于提高谷偏振度的光学介电微球阵列/单层二硒化钨复合结构的制备方法，将光学介电微球分散液滴在单层二硒化钨上，通过自组装的方法得到光学介电微球阵列/单层二硒化钨复合结构。本发明得到的光学介电微球阵列/单层二硒化钨复合结构具有优异的谷偏振光电性能，为谷电子器件的设计制造应用提供了一种新的方案。
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| GB/T 7714 | 闫胤洲 , 张晓华 , 赵晨 et al. 一种应用于提高谷偏振度的光学介电微球阵列/单层二硒化钨复合结构的制备方法 : CN202211628609.4[P]. | 2022-12-18 . |
| MLA | 闫胤洲 et al. "一种应用于提高谷偏振度的光学介电微球阵列/单层二硒化钨复合结构的制备方法" : CN202211628609.4. | 2022-12-18 . |
| APA | 闫胤洲 , 张晓华 , 赵晨 , 蒋毅坚 . 一种应用于提高谷偏振度的光学介电微球阵列/单层二硒化钨复合结构的制备方法 : CN202211628609.4. | 2022-12-18 . |
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摘要 ：
钽酸镁(Mg_4Ta_2O_9)晶体的衰减时间快于CdWO_4晶体,光产额及能量分辨率高于CdWO_4晶体,低余辉特性和CdWO_4类似,在0.01%/3 ms左右,又由于Mg_4Ta_2O_9晶体材料无毒性元素,使其成为具有替代含有毒Cd元素的CdWO_4晶体,应用于集装箱安检领域的最佳候选材料之一。本文综述了Mg_4Ta_2O_9晶体的结构特性、晶体生长、闪烁性能及掺杂改性等方面的研究进展,发现通过掺杂Zn或Nb能显著提高其光产额。
关键词 ：
闪烁晶体 闪烁晶体 光学浮区法 光学浮区法 钽酸镁晶体 钽酸镁晶体 掺杂 掺杂 微下拉法 微下拉法 Mg_4Ta_2O_9 Mg_4Ta_2O_9
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| GB/T 7714 | 马云峰 , 徐家跃 , 蒋毅坚 et al. 面向集装箱安检应用的Mg_4Ta_2O_9闪烁晶体及其掺杂改性 [J]. | 人工晶体学报 , 2021 , 50 (10) : 1870-1878 . |
| MLA | 马云峰 et al. "面向集装箱安检应用的Mg_4Ta_2O_9闪烁晶体及其掺杂改性" . | 人工晶体学报 50 . 10 (2021) : 1870-1878 . |
| APA | 马云峰 , 徐家跃 , 蒋毅坚 , BOURRET-COURCHESNEEdith . 面向集装箱安检应用的Mg_4Ta_2O_9闪烁晶体及其掺杂改性 . | 人工晶体学报 , 2021 , 50 (10) , 1870-1878 . |
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摘要 ：
The roll-off of quantum yield is a major challenge facing light-emitting diodes due to the inevitable predominant non-radiative recombination with temperature elevation. Here we report highly-efficient intrinsic electroluminescence (EL) from a biased highly-compensated ZnO:Ga (HC-GZO) microrod with a metal-semiconductor-metal (MSM) structure at high temperatures. The origin of the EL emission is the current-induced Joule heating activation of electric-thermal tunneling electrons and the following spontaneous radiation from multiple donor-acceptor-pair (DAP) recombination. The reduced oxygen vacancy (V-O) concentration via Ga doping promotes the electron-phonon coupling to lower the temperature threshold down to similar to 650 K, facilitating the stability and durability of MSM-EL devices. Meanwhile, an extra channel of radiative recombination is established by introducing Ga donor dopants, expanding the luminescence color space from orange (0.496, 0.445) to red (0.529, 0.408) by varying the V-O concentration in HC-GZO microrods. The present work motivates research on the mechanism and architectural design for novel electric-thermal tunneling induced efficient radiative emission devices at high temperatures using bandgap-engineered semiconductors.
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| GB/T 7714 | Yan, Yinzhou , Xing, Cheng , Liu, Wei et al. Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (4) : 1174-1182 . |
| MLA | Yan, Yinzhou et al. "Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination" . | JOURNAL OF MATERIALS CHEMISTRY C 9 . 4 (2021) : 1174-1182 . |
| APA | Yan, Yinzhou , Xing, Cheng , Liu, Wei , Wang, Qiang , Xu, Chunxiang , Jiang, Yijian . Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination . | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (4) , 1174-1182 . |
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摘要 ：
Here we report a novel ZnO microtubular homojunction photodiode (PD) fabricated by optical vapor supersaturated precipitation (OVSP) and sputtering methods. The acceptor-rich ZnO (A-ZnO) microtube grown by OVSP possesses a great UV-visible rejection ratio of similar to 3.77 and a high external quantum yield of 1.4 x 10(3)%. The formed A-ZnO/n-ZnO homojunction UV-PD realizes an ultrafast photoresponse down to 6 ms (three orders of magnitude faster) and boosts the sensitivity by 2.6-folds with respect to the bare A-ZnO microtube. It is beneficial for weak-signal UV detection down to the threshold of 0.4 mW/cm(2) under random excitation conditions, by which the detectivity up to 6.67 x 10(12) cmHz(1/2)/W is achieved. The ZnO microtubular homojunction paves a new way for design of high-performance wide-bandgap semiconductor UV-PDs, promoting their practical applications in future. (C) 2021 Elsevier B.V. All rights reserved.
关键词 ：
Homojunction Homojunction Ultrafast response Ultrafast response UV photodiode UV photodiode Wide-bandgap semiconductor Wide-bandgap semiconductor ZnO microtube ZnO microtube
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| GB/T 7714 | Wang, Qiang , Zou, Anshan , Yang, Lixue et al. Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection [J]. | JOURNAL OF ALLOYS AND COMPOUNDS , 2021 , 887 . |
| MLA | Wang, Qiang et al. "Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection" . | JOURNAL OF ALLOYS AND COMPOUNDS 887 (2021) . |
| APA | Wang, Qiang , Zou, Anshan , Yang, Lixue , Liu, Beiyun , Zhang, Yulin , Chen, Fei et al. Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection . | JOURNAL OF ALLOYS AND COMPOUNDS , 2021 , 887 . |
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摘要 ：
The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a p-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I-V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg-H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O-2-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V.
关键词 ：
electrical property electrical property optical property optical property GaN epitaxial wafers GaN epitaxial wafers excimer laser irradiation excimer laser irradiation GaN-based LED GaN-based LED
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| GB/T 7714 | Jiang, Yijian , Tan, Haoqi , Zhao, Yan . Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation [J]. | SYMMETRY-BASEL , 2021 , 13 (10) . |
| MLA | Jiang, Yijian et al. "Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation" . | SYMMETRY-BASEL 13 . 10 (2021) . |
| APA | Jiang, Yijian , Tan, Haoqi , Zhao, Yan . Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation . | SYMMETRY-BASEL , 2021 , 13 (10) . |
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摘要 ：
Here, we fabricated In2O3(ZnO)(m) (IZO) superlattice microplates with hexagon morphologies by the substrate-free optical vapor supersaturated precipitation. The IZO microplates possessed a superlattice structure with a large m number, i.e., m = 23, consisting of layered alternating stacks of octahedral InO2- as inversion boundaries and layered InZnmOm+1+ as a zig-zag modulated pattern. The Raman peak at 613 cm(-1) confirmed the superlattice of the IZO microplates. The broad asymmetric excitonic photoluminescence (PL) emission with the photon energy of 3.236 eV indicated the heavy doping of indium in the IZO, resulting a redshift of similar to 32 meV from the near-band-edge emission. The unusual negative thermal quenching of PL intensity was also observed. Moreover, the anisotropic electrical properties of the IZO superlattice microplates were manifested, for the first time, where the in-plane conductivity was two orders of magnitude higher than out-plane one. The present work provided new insight into the free-standing IZO superlattice microdevices for future optoelectronic applications.
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| GB/T 7714 | Liao, Yimin , Yan, Yinzhou , Yang, Lixue et al. Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation [J]. | JOURNAL OF MATERIALS SCIENCE , 2021 , 56 (24) : 13723-13735 . |
| MLA | Liao, Yimin et al. "Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation" . | JOURNAL OF MATERIALS SCIENCE 56 . 24 (2021) : 13723-13735 . |
| APA | Liao, Yimin , Yan, Yinzhou , Yang, Lixue , Pan, Yongman , Lu, Yue , Chen, Fei et al. Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation . | JOURNAL OF MATERIALS SCIENCE , 2021 , 56 (24) , 13723-13735 . |
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摘要 ：
<正>介电微球光学微腔在全光谱范围内具有低损耗光子纳米射流、光学回音壁模式以及定向天线等介观光场调控效应,在纳米粒子探测、荧光增强、增强拉曼光谱、光学超分辨成像等领域得到了广泛关注。本报告详细介绍了介电微球腔阵列对荧光及拉曼两种光散射过程的调控作用机制。通过在刚性衬底上构建介电微球腔阵列,分别实现了高质量、宽禁带半导体薄膜紫外荧光增强及固态材料的增强拉曼光谱,全面阐述了微球腔聚焦效应、抗反射限光效应、光学回音壁谐振、定向天线效应以及衬底
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| GB/T 7714 | 闫胤洲 , 蒋毅坚 . 介电微球阵列结构光辐射/散射调控:从刚性衬底到柔性穿戴 [J]. | 量子电子学报 , 2020 , 37 (01) : 123-124 . |
| MLA | 闫胤洲 et al. "介电微球阵列结构光辐射/散射调控:从刚性衬底到柔性穿戴" . | 量子电子学报 37 . 01 (2020) : 123-124 . |
| APA | 闫胤洲 , 蒋毅坚 . 介电微球阵列结构光辐射/散射调控:从刚性衬底到柔性穿戴 . | 量子电子学报 , 2020 , 37 (01) , 123-124 . |
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摘要 ：
本实用新型实施例涉及晶体材料生长技术领域，提供了一种微米晶气相生长装置。微米晶气相生长装置包括：反应腔，反应腔内设置有原料棒；光束整形元器件，每个光束整形元器件上安装有激光输出头，多个光束整形元器件围绕反应腔设置并朝向原料棒定位；其中，原料棒的顶端位于经由多个光束整形元器件调整后汇聚形成的激光聚焦光斑处。本实用新型实施例提供的微米晶气相生长装置，通过设置光束整形元器件实现了光强分布的精确调控，同时将分散的光束调整成准直光束，通过多个光束整形元器件的光束聚焦，实现了聚焦光斑形状；通过设置激光输出头，将热源改为激光，增大了热源的加热功率，可实现高分解温度微米晶的生长，显著地提高了微米晶的生长速度。
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| GB/T 7714 | 蒋毅坚 , 廖逸民 , 闫胤洲 et al. 微米晶气相生长装置 : CN202020790915.8[P]. | 2020-05-13 . |
| MLA | 蒋毅坚 et al. "微米晶气相生长装置" : CN202020790915.8. | 2020-05-13 . |
| APA | 蒋毅坚 , 廖逸民 , 闫胤洲 , 王强 , 涂冶 . 微米晶气相生长装置 : CN202020790915.8. | 2020-05-13 . |
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